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(R)
THBT7011D
DUAL OVERVOLTAGE PROTECTION FOR TELECOM LINE
Application Specific Discretes A.S.D.TM
FEATURES BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30A for 10/1000s surge. HOLDING CURRENT : IH = 150mA. BREAKDOWN VOLTAGE: 70V Min. LOW DYNAMIC BREAKOVER VOLTAGE.
SO-8 DESCRIPTION Dedicated to telecommunication equipment protection,this device provides a dual bidirectional protectionfunction. Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. FUNCTIONAL DIAGRAM
T
R
G
PINOUT CONFIGURATION
T NC NC R
TM: ASD is trademarks of STMicroelectronics.
G G G G
January 1999 - Ed: 5C
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THBT7011D
COMPLIES WITH THE FOLLOWING STANDARDS: CCITT K20 VDE0433 VDE0878 IEC-1000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B BELLCORE TR-NWT-001089 First level BELLCORE TR-NWT-001089 Second level CNET l31-24 Peak Surge Voltage (V) 4000 4000 4000 level 4 level 4 1500 800 100 2500 1000 5000 4000 Voltage Waveform (s) 10/700 10/700 1.2/50 10/700 1.2/50 10/160 10/560 9/720 2/10 10/1000 2/10 0.5/700 Current Waveform (s) 5/310 5/310 1/20 5/310 8/20 10/160 10/560 5/320 2/10 10/1000 2/10 0.8/310 Admissible Ipp (A) 25 40 50 25 50 47 35 25 90 30 90 25 Necessary Resistor () 10 25 15.5 23 24 50 -
ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP ITSM Tstg Tj TL Parameter Peak pulse current (see note 1) Non repetitive surge peak on-state current (F=50Hz) Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s 10/1000 s tp = 100 ms t = 1s Value 30 15.5 9 - 40 to + 150 + 150 260 Unit A A C C C
Note 1 : Pulse waveform : 10/1000s tr=10s
% I PP 100
tp=1000s
30 25 20 15 10
Itsm ( A )
F=50Hz Tj initial=+25C
50
0 tr tp
t
5 0 50
t ( ms )
100 200 500 1 000 2 000
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THBT7011D
TEST CIRCUITS FOR IPP
Transversal mode
TIP or RING I
See test circuit 3
PP
RP
THBT
GND
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM IRM VR VBR VBO IH IBO IPP C Parameter Stand-offvoltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance
IBO IH IR IPP
I
V
VRM VR V VBO BR
STATIC PARAMETERS BETWEEN TIP AND GND, RING AND GND Type IRM @ VRM max.
A V
IR @ V R max. note 1
A V
VBO @ max. note 2
V
IBO max.
mA
IH min note 3
mA
C max note 4
pF
min.
mA
THBT7011D
5
66
50
70
89
50
400
150
80
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THBT7011D
STATIC PARAMETERS BETWEEN TIP AND RING Type max.
A
IRM @ VRM note 6
V
IR @ V R max.
A
C note 6
V
max note 4
pF
THBT7011D
Note 1: Note 2: Note 3: Note 4: Note 5 : Note 6:
5
132
50
140
40
IR measured at VR guarantees VBR > VR Measured at 50 Hz (1 cycle) test circuit 1. See the reference test circuit 2. VR = 1V, F = 1MHz. See test circuit 3 for VBO dynamic parameters; Rp is the protection resistor located on the line card. Ground not connected or |V TIP| = |VRING| versus Ground
DYNAMIC BREAKOVER VOLTAGES (Transversal mode) Type THBT7011D Symbol VBO Test conditions (see note 5) 10/700s 1.2/50s 2/10s 1.5kV 1.5kV 2.5kV Rp=10 Rp=10 Rp=62 IPP=30A IPP=30A IPP=38A Maximum 90 95 150 Unit V
TEST CIRCUIT 1 for IBO and V BO parameters:
tp = 20ms
Auto Transformer 220V/2A
static relay. K
R1
140
R2
240
220V
Vout IBO measure
Transformer 220V/800V 5A
D.U.T
V BO measure
TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 .
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THBT7011D
TEST CIRCUIT 2 for IH parameter.
R D.U.T.
- VP
V BAT = - 48 V
Surge generator
This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max.
TEST CIRCUIT 3 for IPP and VBO parameters :
R4
(VP is defined in no load condition)
TIP R2 R ING R3 R1
L
VP
C1
C2
G ND
Pulse (s) tr 10 1.2 2 tp 700 50 10
Vp (V) 1500 1500 2500
C1 (F) 20 1 10
C2 (nF) 200 33 0
L (H) 0 0 1.1
R1 () 50 76 1.3
R2 () 15 13 0
R3 () 25 25 3
R4 () 25 25 3
IPP (A) 30 30 38
Rp () 10 10 62
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THBT7011D
APPLICATION CIRCUIT : 1 - Line card protection
RING GENERATOR
- V BAT
LINE A
T E S T R E L A Y S
PTC
RING RELAY
220 nF
SLIC
THBT7011D PTC LCP1511D
LINE B
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THBT7011D
ORDER CODE
THBT
70 1 1 D RL
PACKAGING: RL = tape and reel. = tube.
BIDIRECTIONAL TRISIL BREAKDOWN VOLTAGE MARKING Types THBT7011D Package SO-8 Marking BT701D VERSION
LOW DYNAMIC CHARACTERISTICS. PACKAGE: 1 = SO8 Plastic.
PACKAGE MECHANICAL DATA. SO-8 Plastic
MARKING : Logo, Date Code, Part Number.
REF. DIMENSIONS Millimetres
L c1 C a3 a2 A b1
Inches Max. Min. 1.75 0.25 0.004 1.65 0.85 0.025 0.48 0.014 0.25 0.007 Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 0.050 0.150 4.0 0.6 8 (max)
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Min. A a1 a2 a3 b b1 C c1 0.1 0.65 0.35 0.19 0.25 4.8 5.8
Typ.
b e3
S
e
a1 E
D M
0.50
0.50 0.010 45(typ) 5.0 6.2 0.189 0.228
8
5 F
D E e e3 F
1
4
1.27 3.81 3.8 0.4 0.15 1.27 0.016
0.157 0.050 0.024
Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.08g
L M S
THBT7011D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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